Thank you for your fast response
The interest bandwidth of the photo-detector signal should be between 1.4 GHz and 2.6 GHz (the data will have about 2 Gbits/s). Our photo-detector was designed using photonic integrated techniques and only has two pads: one ground and the cathode (their impedance is capacitive) . The TIA and photo-diode will be bond to "top layer" pads/tracks using one of the ROGERS substrates. We thought in connected the TIA outputs to SMA RF connectors, the grounds to PCB bottom layer using vias and the DC voltages to Right Angle SMT 2 male connectors.
Maybe, we will need a reverse bias voltage of +2.0V. Could be a bias-T circuit a possible solution to this problem?