We will introduce some of the benefits of gallium nitride (GaN) over gallium arsenide (GaAs) IC technologies and explore some of the challenges present in moving from GaAs to GaN power amplifier implementations for die, surface mount, and mechanical attach. Challenges will include assembly, thermal management, and DC bias considerations. We will show how ADI's solutions can be used to overcome those challenges.
- Benefits of GaN over GaAs
- Considerations in moving from GaAs to GaN with assembly, thermal management, and DC bias optimization