Could you please tell me allowable maximum RF input power level under Vdd=0V for HMC849LP4C? Is it same as Vdd=3V/5V?
We recommend to apply the RF signal later than VDD supply. The absolute maximum RF input power given in the datasheet will be valid as long Vdd supply is powered up.
When no Vdd supply is applied, the RFC port of the HMC849A will be at high impedance and so the RF input signal applied to that port will be fully reflected. In such case, the device will safe if the RF input power is kept below 20 dBm. This value will not change with the operating temperature because the maximum RF input power becomes breakdown voltage limited (not thermal limited) when no VDD supply is applied.
Unfortunately, we have not evaluated the maximum RF input power when no DC bias applied. When no DC bias applied, the response will be high insertion loss resulting high power dissipation on device so the part can handle max Pin lower than what it was specified. This is not a recommended operating condition, the RF input signal should be applied after DC biases are powered up.
Thank you for your answer.
Is the device broken or degraded in that case?
In such case, the part may be damaged at input power levels lower than the absolute maximum input power specified in the datasheet.
Should you avoid adding RF signal to input poin under power off of HMC849LP4C?
Or how much voltage or current can we add the RF sigbal to input pin under power off? And is the value affected by temperature?
Thanks & Regards,
Thank you for your answer. We would like to confirm some points.
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