A customer would like to use ADuM4135 connect to not only IGBT but also MOS, GaN, SiC FETs.
Is it possible? Is there anything to be careful of when connecting with these FETs?
Thank you for your advice in advance.
Yes, the ADuM4135 can operate IGBTs, MOSFETs, and some GaN and SiC devices. The ADuM4135 is targeted at IGBT operation since it has desaturation protection integrated into the part, but MOSFET operation can also see benefit from the desaturation protection circuitry. The miller clamp can benefit most types of devices.
An IGBT is unique from MOSFET devices in that the output port looks like a BJT, rather than an Rdson. Overcurrent events make the collector to emitter voltage of an IGBT go above the detection threshold of the desaturation circuitry, which might not happen with a MOSFET in a similar situation. One thing desaturation detection can add to MOSFET operation is telling whether the gate or drain has become disconnected in the circuit, so it is not completely without value.
GaN and SiC are exciting switch technologies that show a lot of promise for the future. Currently, there are a few devices that use a cascoded design. In those devices, the input port is often a standard Silicon MOSFET. The main challenge for driving those is making sure the gate driver has adequate common mode transient immunity (CMTI). The ADuM4135 has very good CMTI, allowing for it to be a good fit for GaN and SiC devices, although some of the protection features might be more than what is needed for some designs.
Another consideration for GaN is if a bare device is being used, the gate voltage has very strict limits. In this case, the ADuM4135 is usually not a good fit, as the UVLO on the secondary side sits at around 12 V, well above the max gate voltage of around 5 or 6 V for some GaN devices.
Thank you very much for your clear answer!
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