Is there anything I should be careful of when using parallel MOSFET as attachment?
Here is what is important:
layout, heat, and total Qg.
Whenever MOSFETs are chosen, one has to pay attention to all of the same parameters regardless if they are in parallel or not. Qg of parallel MOSFETs adds up. Rds(on) of parallel MOSFETs effectively is cut in half. Gate threshold rules remain the same. Layout rules remain the same with short traces and minimized hot-loops.
If one wants to spread out the heat, then our top recommendation for parallel MOSFETs is shown in the example demonstration circuit layout files for DC2431A, found on analog.com under the LT8390 landing page.
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