I want to interface a memory with high access time with TS201 which is connected to I/O bus (external memory interface). I have kept TS201 in default configuration and DSP is working at 600Mhz. I/O bus is running at 120Mhz. We have configured SYSCON for memory bank 0 as our desired address space. A FRAM with access time of 110ns is connected to this memory bank.
As FRAM is very slow compared to IO interface so we configured SYSCON to use 3 wait cycles for this memory bank. But then also we are not able to read/write from/to memory. Is there any way to increase the number of wait cycles or to increase the read/write cycle time in order to access alow devices.