Leakage current of ADGM1304 & ADGM1004


ADGM1004 has ESD diodes at its RFx & RFC pins when compared to ADGM1304 (which doesn't have). 

1. Then shouldn't the leakage at RFx & RFC pins in ADGM1004 be higher when compared with ADGM1304. But according to the data sheet, both the ICs have exactly the same leakage. Then what is the cause of this leakage current ?.  

2. The capacitance at RFx pins are lower in ADGM1004 when compared with ADGM1304. Shouldn't it be higher (due to ESD diodes) or at least same (in case package capacitance dominates)?.


  • Hi Siva,

    Yes ADGM1004 has ESD diodes on all of the RF pins while ADGM1304 don't have ESD diodes, that's why ADGM1004 has 5KV HBM ESD rating on the RF pins and 2.5KV HBM ESD rating on all other pins.

    1. ESD diodes used in the ADGM1004 don't have any leakage. The main contributor for the leakage is the gate driver IC and dielectric layers used in the MEMS switch. That's why both ADGM1304 and ADGM1004 has same leakage specifications.
    2. Regarding the capacitance, for both ADGM1304 and ADGM1004 package capacitance dominates. The on and off switch channel capacitance specification includes LFCSP package capacitance. ESD die used in ADGM1004 has very small capacitance associated with it.