HMC849ALP4CE has 16mVpp spurious dc transient at RF ports when a 1MHz pulse signal (0V/5V) is applied to Vctrl control input.
Has the HMC849A RF switch changed in performance recently?
The reason for the question: its S-parameter model has changed dramatically since 2017. Below is a plot for the HMC849A S-parameter model downloaded in 2017 versus a plot for supposedly the same…
The typical rise and fall time for the HMC8038 is ~35-40ns.
The typical rise time for the HMC849A is ~60ns
Please note, there will be some part-to-part, and process variations. The GaAs process (HMC849A) will have more process variations…
My customer had used HMC849LP4CE.
They asked for the PDN information of HMC849LP4CE but I could not find the infomation HMC849, not HMC849A.
Please provide PDN information of HMC849.
The HMC849A conducts the signal in bot direction, from RFC to RFx or from RFx to RFC.
The dc blocking capacitor should behave like a short at operating frequency. 1.6 pF could introduce some loss due to its reactance at 5.9 GHz so I would recommend…
天线到数字以及数字到天线……ADI凭借领先的射频技术能力、系统知识与工艺技术，提供直流到90 GHz以上、涵盖整个RF信号链最丰富多样的RF IC组合。