Do we have the on wafer measured S-parameter file for the following Hittite Components :
Also I want to know whether these die are internally compensated or not for bond wire inductance.
S-parameters for the HMC-ALH476 are available on the HMC-ALH476 product page of the analog.com website. See link below:
Use of a text editor to open the S-par file will allow you to see many of the test details.
The die measured was not on wafer but was instead attached to a metal plate using conductive epoxy.
The DC bias network was as shown on the data sheet's Assembly Diagram, except as described in the S-par file.
DC bias was set to Vdd=4V with Vgg adjusted to achieve Iddq=90 mA (data sheet spec table conditions).
The die pads are the RF reference planes. Pin=-15 dBm.
S-parameters for the HMC-ALH364 are attached (HMC-ALH364_probe_dB.s2p).
This die was measured on-wafer, so the die pads are the RF reference planes.
As above, test details can be found within the text file.
For both of the above parts, the S-parameter can be used in simulation to help determine the expected effects of bond-wires at the RFIN and RFOUT pads.