HMC-ALH364 and HMC-ALH476

Do we have the on wafer measured S-parameter file for the following Hittite Components :

1.HMC-ALH364

2.HMC-ALH476

Also I want to know whether these die are internally compensated or not for bond wire inductance.

thanks.

  • Hello ADI_Eva,

    S-parameters for the HMC-ALH476 are available on the HMC-ALH476 product page of the analog.com website. See link below:

    http://www.analog.com/media/en/simulation-models/s-parameters/HMC-ALH476.zip

    Use of a text editor to open the S-par file will allow you to see many of the test details.

    The die measured was not on wafer but was instead attached to a metal plate using conductive epoxy.

    The DC bias network was as shown on the data sheet's Assembly Diagram, except as described in the S-par file.

    DC bias was set to Vdd=4V with Vgg adjusted to achieve Iddq=90 mA (data sheet spec table conditions).

    The die pads are the RF reference planes. Pin=-15 dBm.

    S-parameters for the HMC-ALH364 are attached (HMC-ALH364_probe_dB.s2p).

    This die was measured on-wafer, so the die pads are the RF reference planes.

    As above, test details can be found within the text file.

    For both of the above parts, the S-parameter can be used in simulation to help determine the expected effects of bond-wires at the RFIN and RFOUT pads.

    Regards,

    SMcBride

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