The superior switching performance of Gallium Nitride (GaN) FET enable higher power density for space constrained applications. Solutions using GaN technology...
And here is a new quiz!
Many existing courses, articles, etc represent the Thevenin-Norton equivalent dipoles as shown above.
However, there is...
Reading and learning are essential ingredients for personal growth and development. Some books serve as windows to new worlds, offering us insights, inspiration...
by Anders Frederiksen & Margaret Naughton
The automation of tasks is becoming commonplace in all facets of our lives. Who hasn’t seen their neighbor...
It feels just like yesterday Analog Devices joined the Zephyr Project as a Platinum member; we joined the same time as the 3.4 release – but that was in...
Recommended for New Designs
The HMC1126ACEZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), low noise amplifier that operates from 400 MHz to...
HMC1126 on Analog.com
May you help to provide measurement of thru loss on EVB to us for evaluate ?
ADPA7008 EVB Thur Loss
HMC8411 EVB Thur Loss
HMC1126 EVB Thur Loss
Thanks for your sharing.