Q: Are there part-to-part gain variation on ADL8107 when using different VDDs and Rbias?
ADL8107
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The ADL8107 is a gallium arsenide (GaAs), monolithic microwave IC (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband...
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ADL8107 on Analog.com
Q: Are there part-to-part gain variation on ADL8107 when using different VDDs and Rbias?
A: During design evaluation we measured at 3.3V with a lower Rbias value (1.3K, 90mA) and at 5V with a ~10K bias resistor (70mA). The results were relatively tight, the most we saw as far as variation from part to part was ~1.5dB gain.
A: During design evaluation we measured at 3.3V with a lower Rbias value (1.3K, 90mA) and at 5V with a ~10K bias resistor (70mA). The results were relatively tight, the most we saw as far as variation from part to part was ~1.5dB gain.