I have read many questions and answers about the HMC637ALP5E and various application documents.
And there are three questions:
1）The same type amplifier e.g. HMC797APM5E provides a relationship between Idd and Vgg1(Representative of a Typical Device), but HMC637ALP5E doesn't. So, can you provide a similar relationship curve about HMC637ALP5E? Certainly, I also need the similar relationship curve about HMC561LP3(Idd vs. Vgg).Thanks.
2) The HMC637ALP5E is a GaAs MMIC pHEMT Distributed Power Amplifier, I know the the best way following the recommended bias sequence during power up and down is to use Active Bias Controller(ABC). For some reasons, ABC is not used. Then, according to the reference circuit provided in the application document " Design and Implementation of a Bias Sequencing Circuit for the HMC463LP5 Low Noise Amplifier.pdf "(View Attachments), a certain degree of modification has been made, which is to add a power supply using a resistive divider for Vgg2, in between Vdd and GND. Is this feasible?
3) For this type of amplifier, if increase the bypass capacitor value of Vgg1 based on the 2) modificated circuit, then Vgg2 and Vdd are powered off at the same time, and Vgg1 is finally powered off. In this case, will the amplifier be damaged in the event of a sudden power failure?