Channel 1 and Channel 2 in ADP5052 integrate high-side power MOSFETs and
low-side MOSFET drivers. External NFETs should be used in low-side power
devices to achieve an optimized solution. Dual NFETs in a single package is
highly recommended if the size of the solution needs to be reduced.
Note that the MOSFET Rdson is related to the efficiency under heavy load. The
small Qg is preferred to reduce switching loss and avoid the short-through
issue. Generally Qg lower than 20nC is recommended for the ADP5052.
The ADIsimPower tool can also help to choose the right NFETs according to