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Spike on GateQ2

Category: Hardware
Product Number: LT8710

Hello Folks, I would like to draw your attention to this spike issue. Please assist.

I see a premature spike in the Q2 Drain-Source current caused by the gate of Q2 pulling down for a very short period?  The whole spike is only 100-150ns. But it causes the currents to spike up to 100A shorting Q1 and Q2 . plus Unloading the caps etc. Do you have an idea where this spike on the gateQ2 TG pin comes from >??

At least this is how i have come to analyze this thing.

The P-channel MOSFET is set in forward mode (source on Load side with body diode  - cathode on source - anode on the 12V side). low Ron is only available when the gateQ2 is at or below 9V (see graph).. The rest of the time  the MOSFET is off and its forward biased body diode should only conduct if the voltage differential between Drain and Source is more than 700mV toward the load. 

The setup w. a P-channel in forward mode is in principal OK except for the current spike. It ruins the advantages of a MOSFET if loss can't be brought below 200-300mW. I am using an Infineon an ultra low Ron MOSFET. see schematic. Even, if i go back to the old obsolete VISHAY MOSFET (Si4401) as used in app sheet, it winds up the same story. Slightly lower current shoot through current because a much higher Ron. But the same issue in principle. The gateQ2 is seeing a spike from the TG pin which turn on Q2 at the wrong time.

Do you have an idea how to remedy this?  I am wondering how folks solve this issue to get to 200-300mW loss at 50W output. 

I have alternatively experimented w. 2 high power schottky diodes in place of the MOSFET. which works great but produces a 1.9W loss. Even w. the best 10A Schottky from Rohm.
The idea behind the 8710 is the ability to drive a P-MOSFET as an ideal diode in order to bring the loss to below 300mW, or at least that would be a goal. (Given by the 16m ohm Ron and the 4.5A output current.)

My alternative board for SEPIC/INVERTING uses the LT3759 chip with features a set of simple power schottky diodes, which works great except the loss of 2W at 50-60W out. 

Edit Notes

Grammar
[edited by: Janus523 at 3:42 AM (GMT -4) on 28 Mar 2026]
  • Below just for your reference: this is the Vds vs. Vgate graph for the (IPB110P06LM) p-channel MOSFET. 

    Below 9V this specific MOSFET (p-channel) produces a loss of about 200-250mW. 

    Above 10V the MOSFET switches to Body diode conduction. >3.5-3.6W loss assuming a 5A drain current. 

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