LT4356 turn-on much faster in hardware than LTspice and IGATE/C1 calculation
I’m using an LT4356HMS-3#PBF to control the turn on of external MOSFETs. The LT4356-3 GATE pin has an external capacitor C1 = 100nF to ground. The output ramps to about 58 V.
Using the datasheet equation:

In LTspice using the LT4356 model from ADI, and MOSFET models with similar specifications to the devices used in the real design, the simulated 10–90% rise time is ~91.82ms.

Across multiple boards, the measured 10–90% rise time in the lab is in the range of 45ms to 50ms (example capture attached showing ~49.05ms)
What LT4356-3 behaviour or modelling limitation could explain the real turn on being significantly faster than the LTspice model and the IGATE/C1 estimate?