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LTC4359 Recommended for New Designs
The LTC4359 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. It controls the forward...
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LTC4359 on Analog.com

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LTC4359 中MOS损坏 - Translated: LTC4359 中MOS损坏



		

			

									
					    kimizhang
					
							

			
				
									
											
			
			
				
    
			
			
			    	
			                    
                
				                on Nov 20, 2023 
				
			
			
		
    

				
		
    
		    		    
		    
		    		      		            		        
    Category: Hardware
    
    		        		        		    		    	
			
    Translated: 
    

    I am using LTC4359 as an ideal diode and reverse protection for a charger to charge the battery. 
    Currently, a total of more than 100 sets of boards are used. About 4-5 boards on the right have M5 MOS tubes burned out. 
    The measured Vgs voltage is normal and there is no oscillation circuit. Input voltage 42V, maximum input current 15A. 
    The MOS tube uses PSMN3R7-100BSEJ. Is the MOS tube I chose wrong?
    

    

    

    我正在使用LTC4359做理想二极管以及反向保护，用于充电器给电池充电。当前总共使用了100多套板子，大概右4-5块板子都是M5这颗MOS管烧毁，测量的Vgs电压正常，也没有震荡电路。输入电压42V，最大输入电流15A。MOS管使用的是PSMN3R7-100BSEJ。是我选择的MOS管不对吗？
    

     
    
										

    
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[edited by: GenevaCooper at 10:15 PM (GMT -5) on 21 Nov 2023]
				
    
						
			        
		
    

				
						
        

    
    Tags: 
                                            
                 hardware
                
                                                    
                 Power Monitor  Control  and Protection
                
                                                    
                 ltc4359
                
                                                    
                 PowerPath  Ideal Diodes  and Load Switches
                
                                
            
    
    
    

		
    
			
						
									
									
						
						
			
			
			
			
		
    

        
        

					
    
			
    


    


	
    
		






		

			
    
			
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      kimizhang said:
      我正在使用LTC4359做理想二极管以及反向保护，用于充电器给电池充电。当前总共使用了100多套板子，大概右4-5块板子都是M5这颗MOS管烧毁，测量的Vgs电压正常，也没有震荡电路。输入电压42V，最大输入电流15A。MOS管使用的是PSMN3R7-100BSEJ。是我选择的MOS管不对吗
      

      [Question translated to English]:
      

      "I'm…
      
				
			
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      kimizhang said:
      我正在使用LTC4359做理想二极管以及反向保护，用于充电器给电池充电。当前总共使用了100多套板子，大概右4-5块板子都是M5这颗MOS管烧毁，测量的Vgs电压正常，也没有震荡电路。输入电压42V，最大输入电流15A。MOS管使用的是PSMN3R7-100BSEJ。是我选择的MOS管不对吗
      

      [Question translated to English]:
      

      "I'm using LTC4359 to do the ideal diode as well as reverse protection for the charger to charge the battery. At present, a total of more than 100 sets of boards are used, and about 4-5 boards on the right are all burned out by the M5 MOS tube, and the measured Vgs voltage is normal, and there is no oscillation circuit. The input voltage is 42V, and the maximum input current is 15A. The MOS tube uses PSMN3R7-100BSEJ. Is it the wrong MOS tube I chose?"

      The back-to-back FETs form a load switch configuration.
      During start-up, the inrush current into the output capacitor is controlled by the size of CGATE.
      See p11 in the datasheet for inrush equation.

      If M5 fails, this hints at a Safe Operating Area (SOA) issue during start-up.
      Make sure that given max VIN, the FET has the SOA performance to charge up COUT. 
      Also make sure that the load doesn't turn on until after COUT is charged, or that will place more SOA stress on M5. (likely the issue)

      The PSMN3R7-100BSEJ has good SOA performance, so it is probably not to blame.

      Here's a similar thread showing calculations:
      RE: LTC4359 MOSFET damage issue

      -Aaron
      
			
      

		
			
	      

		
		
	
      
	
      
		
      
			
		
      
	
      
	
      
		
						
						
						
						
				
				
		
		
      
			
		
      
	
      

      

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      kimizhang said:
      我正在使用LTC4359做理想二极管以及反向保护，用于充电器给电池充电。当前总共使用了100多套板子，大概右4-5块板子都是M5这颗MOS管烧毁，测量的Vgs电压正常，也没有震荡电路。输入电压42V，最大输入电流15A。MOS管使用的是PSMN3R7-100BSEJ。是我选择的MOS管不对吗
      

      [Question translated to English]:
      

      "I'm using LTC4359 to do the ideal diode as well as reverse protection for the charger to charge the battery. At present, a total of more than 100 sets of boards are used, and about 4-5 boards on the right are all burned out by the M5 MOS tube, and the measured Vgs voltage is normal, and there is no oscillation circuit. The input voltage is 42V, and the maximum input current is 15A. The MOS tube uses PSMN3R7-100BSEJ. Is it the wrong MOS tube I chose?"

      The back-to-back FETs form a load switch configuration.
      During start-up, the inrush current into the output capacitor is controlled by the size of CGATE.
      See p11 in the datasheet for inrush equation.

      If M5 fails, this hints at a Safe Operating Area (SOA) issue during start-up.
      Make sure that given max VIN, the FET has the SOA performance to charge up COUT. 
      Also make sure that the load doesn't turn on until after COUT is charged, or that will place more SOA stress on M5. (likely the issue)

      The PSMN3R7-100BSEJ has good SOA performance, so it is probably not to blame.

      Here's a similar thread showing calculations:
      RE: LTC4359 MOSFET damage issue

      -Aaron
      
			
      

		
			
	      

		
		
	
      
	
      
		
      
			
		
      
	
      
	
      
		
						
						
						
						
				
				
		
		
      
			
		
      
	
      

      

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