LDO enable level and leakage current

Does an LDO (ADP150 or ADP160) consume any significant additional quiescent/leakage current due to the enable pin that is driven high at a voltage level lower than VIN? Example: VIN=4V; EN=3V

  • 0
    •  Analog Employees 
    on Jan 6, 2016 4:39 AM

    There will be some additional leakage current from VIN to GND when the enable pin is less than ~VIN (when EN is more than a PMOS threshold below VIN). There will be some slight shoot through current in the EN (CMOS) buffer. Although, this should not be significant. Thanks.

     

  • 0
    •  Analog Employees 
    on Aug 2, 2018 3:19 PM
    This question has been assumed as answered either offline via email or with a multi-part answer. This question has now been closed out. If you have an inquiry related to this topic please post a new question in the applicable product forum.

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    EZ Admin