Does an LDO (ADP150 or ADP160) consume any significant additional quiescent/leakage current due to the enable pin that is driven high at a voltage level lower than VIN? Example: VIN=4V; EN=3V
There will be some additional leakage current from VIN to GND when the enable pin is less than ~VIN (when EN is more than a PMOS threshold below VIN). There will be some slight shoot through current in the EN (CMOS) buffer. Although, this should not be significant. Thanks.