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LTC4366-2 ISSUE

1504121882
on Jun 2, 2019

Picture:  input  from 160V ->350V/2s->160V; output is 160V->200V/2S->160V;  （because the input range of the latter power module is 100V to 200V）

ISSUE:  when input was 350V,and output is 200V,the MOS is  worked in variable resistance region。NOW， the Vdg is 138V，  Will MOS be broken down?   

I think the mos will be broken down, so  what better circut do you have  to withstand 350V/2S?

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  • +1
    •  Analog Employees 
    on Jun 3, 2019 11:24 PM

    Hi ,

    Mosfet failure will depend on power dissipated in this duration. If the current is large for these 2 sec then the FET will fail  with 150V Vds.In your application , with 4A load , the FET will fail. 

    Can you elaborate what is the end application where you expect this 150V surge to last for 2 sec. Automotive surges typically last few msec.

    Regards,
    Ritesh

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  • +1
    •  Analog Employees 
    on Jun 3, 2019 11:24 PM

    Hi ,

    Mosfet failure will depend on power dissipated in this duration. If the current is large for these 2 sec then the FET will fail  with 150V Vds.In your application , with 4A load , the FET will fail. 

    Can you elaborate what is the end application where you expect this 150V surge to last for 2 sec. Automotive surges typically last few msec.

    Regards,
    Ritesh

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