I have a couple of questions regarding the use of the LTC 4412 with a pair of MOSFETS as shown in figure 4 of the datasheet here:
What I am trying to achieve is a high-side switch with reverse current protection by using the LTC4412 with a pair of MOSFETS. So similar to the primary path of Figure 4, without the auxiliary path.
So my questions are as follows:
- Does the back-flow prevention functionality (sensing Vsense relative to Vin) still work as per Figure 1?
- The internal voltage clamping clamps the gate voltage to the higher of Vin or Vsense. Neither of which in this configuration are connected to the source of the MOSFET, leaving the MOSFET V(GS) unprotected. would operation be affected by either flipping the MOSFETS (so the path goes SDDS) or adding a TVS diode between the gates and sources of the MOSFETS?