What's the general differences/principles between MEMS accelerometers that measure high-g (e.g. 200g) vs those that measure low-g (e.g. 2-4g) motions?
I'm curious if differences at the silicon level (e.g. different etching/construction techniques), or somewhere down stream (e.g. in signal processing electronics).
In the past, I've worked with various acceleration data in the abstract, but am new to details of MEMS technology. Currently I have data claiming to be from two sensors on a common physical structure (don't have specific device model numbers yet). I'm a bit surprised that the low-g device is not "killed" by shocks (although I suppose it could be shock mounted (also TBD).
TIA - for any/all insights what's different / common between in the high-g vs low-g MEMS world.