What's the general differences/principles between MEMS accelerometers that measure high-g (e.g. 200g) vs those that measure low-g (e.g. 2-4g) motions?
I'm curious if differences at the silicon level (e.g. different etching/construction techniques), or somewhere down stream (e.g. in signal processing electronics).
In the past, I've worked with various acceleration data in the abstract, but am new to details of MEMS technology. Currently I have data claiming to be from two sensors on a common physical structure (don't have specific device model numbers yet). I'm a bit surprised that the low-g device is not "killed" by shocks (although I suppose it could be shock mounted (also TBD).
TIA - for any/all insights what's different / common between in the high-g vs low-g MEMS world.
Thank you for your post. While we appreciate you considering this forum, your question is a bit outside of the scope of what this forum is dedicated towards, which is intended to focus more on specific application and product-focused questions, rather than to review MEMS architectures and trends. As you continue to research this, I suspect that you will find that handling requirements are often more influential in the the robustness of a particular design, rather than its measurement range. I hope that helps!