We use 3x IRLL110 MOSFETs for 30kHz load switching and currently drive them from 5V 74HC04 logic NAND gate.
As for now we need to add galvanic insulation by driving IRLL110's gates directly from adum1310 outputs (we use 5V supply on both sides).
How do you think could the adum1310 just provide the same perfomance of gate charging as 74HC04? Or it would be significantly better to enforce adum' outputs before apply them to logic-level MOSFET' gate?
The ADuM1310 and the 74HC04 have similar drive strengths on the output. This means that if you run the MOSFETs on the outputs directly, you should see comparable results. One way to read the drive strengths is to look at the Voh and Vol levels in the datasheets. For the Vol numbers, the 4mA test case has both parts showing 0.4V max. For the Voh numbers, the ADuM1310 looks slightly stronger than the 74HC04 (lower difference in Voh).
The ADuM1310 will have a slightly higher propagation delay as compared to the 74HC04, but the iCoupler parts' propagation delays are much less than any comparable optocoupler.
Is propagation delay a major concern for your application? If so, adding a booster stage after the ADuM1310 is not recommended, as this will add to the total propagation delay. If you require a stronger drive strength, but still need low propagation delay, you might want to look at our other gate driver specific products. Unfortunately, none of the dedicated gate drivers come with exactly three channels:
So to answer your question, I believe you will see similar performance from the ADuM1310, but if you do need even faster rise times, we have more products available as well.