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Hi I am working on a design which has  LT6106 current sense amplifier where the VCC is 5V and IN  and IN- is 12V. Device is working now and I want to understand if the internal ESD structure of the IC are specialised enough for this application a

Hi I am working on a design which has  LT6106 current sense amplifier where the VCC is 5V and IN+ and IN- is 12V. Device is working now and I want to understand if the internal ESD structure of the IC are specialised enough for this application as when Input voltage is higher than the supply voltage.  If not can i have a drop in replacement of that IC which are having such capability as i cant change the design now. opamp

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  • Hi Krisf,

    Thanks for the response.

    I have 12V which is generated from a source for the DIMM connectors on the boards. I am monitoring this power using a current monitoring device also parallely I have connected the LT6 device for sensing the current. Output is sensed by a Phase controller which in turn controls a voltage regulator which generates required DDR voltages (VDDQ) . I have set the gain of LT6 device as 20 itself.

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  • Hi Krisf,

    Thanks for the response.

    I have 12V which is generated from a source for the DIMM connectors on the boards. I am monitoring this power using a current monitoring device also parallely I have connected the LT6 device for sensing the current. Output is sensed by a Phase controller which in turn controls a voltage regulator which generates required DDR voltages (VDDQ) . I have set the gain of LT6 device as 20 itself.

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